M14D2561616A-2E Datasheet, PDF (9/61 Pages) Elite Semiconductor Memory Technology Inc. – Internal pipelined double-data-rate architecture; two data access per clock cycle

ESMT
AC Overshoot / Undershoot Specification
Parameter
Pin
Maximum peak amplitude ^{Address, CKE, CS , RAS , CAS , WE , ODT,}
allowed for overshoot
CLK, CLK , DQ, DQS, DQS , DM
Maximum peak amplitude ^{Address, CKE, CS , RAS , CAS , WE , ODT,}
allowed for undershoot _{CLK, CLK , DQ, DQS, DQS , DM}
Maximum overshoot area ^{Address, CKE, CS , RAS , CAS , WE , ODT,}
above V_DD
CLK, CLK , DQ, DQS, DQS , DM
Maximum undershoot area ^{Address, CKE, CS , RAS , CAS , WE , ODT,}
below V_SS
CLK, CLK , DQ, DQS, DQS , DM
M14D2561616A (2E)
Automotive Grade
Value
-1.8
-2.5
0.5
0.5
0.5
0.5
0.5
0.66
0.19
0.23
0.5
0.66
0.19
0.23
Unit
V
V
V-ns
V-ns
V-ns
V-ns
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2014
Revision : 1.0
9/61