M14D1G1664A-2S Datasheet, PDF (9/65 Pages) Elite Semiconductor Memory Technology Inc. – Internal pipelined double-data-rate architecture; two data access per clock cycle

ESMT
(Preliminary)
M14D1G1664A (2S)
Automotive Grade
AC Overshoot / Undershoot Specification
Parameter
Pin
Value
Unit
-1.8
-2.5
Maximum peak amplitude allowed for
overshoot
Address, CKE, CS , RAS , CAS , WE ,
ODT, CLK, CLK , DQ, DQS, DQS , DM
0.5
0.5
V
Maximum peak amplitude allowed for
undershoot
Address, CKE, CS , RAS , CAS , WE ,
ODT, CLK, CLK , DQ, DQS, DQS , DM
0.5
0.5
V
Address, CKE, CS , RAS , CAS , WE ,
0.5
Maximum overshoot area above V_DD
ODT,
CLK, CLK , DQ, DQS, DQS , DM
0.19
0.66
V-ns
0.23
V-ns
Address, CKE, CS , RAS , CAS , WE ,
0.5
Maximum undershoot area below V_SS
ODT,
CLK, CLK , DQ, DQS, DQS , DM
0.19
0.66
V-ns
0.23
V-ns
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2014
Revision : 0.1
9/65