M13S64322A Datasheet, PDF (41/49 Pages) Elite Semiconductor Memory Technology Inc. – 512K x 32 Bit x 4 Banks Double Data Rate Synchronous DRAM

ESMT
Write followed by Precharge (@BL=4)
Preliminary
M13S64322A
0
1
CLK
CLK
CKE
2
3
4
5
6
7
8
9
10
HIGH
CS
RAS
CAS
BA0,BA1
BAa
A8/AP
ADDR
(A0~A7,A9~A10)
Ca
WE
DQS
BAa
tWR
DQ
Da0 Da1 Da2 Da3
DM
COMMAND
WRITE
PRE
CHAR GE
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision : 0.5
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