M13S64322A Datasheet, PDF(4/49 Page) Elite Semiconductor Memory Technology Inc. – 512K x 32 Bit x 4 Banks Double Data Rate Synchronous DRAM

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M13S64322A Datasheet, PDF (4/49 Pages) Elite Semiconductor Memory Technology Inc. – 512K x 32 Bit x 4 Banks Double Data Rate Synchronous DRAM

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ESMT

Pin Description

(M13S64322A)

Pin Name

A0~A10,

BA0,BA1

DQ0~DQ31

RAS

CAS

VSS

VDD

DQS

DQS0~DQS3

Function

Address inputs

-Row address A0~A10

-Column address A0~A7

A8/AP : AUTO Precharge

BA0, BA1 : Bank selects (4 Banks)

Data-in/Data-out

Row address strobe

Column address strobe

Write enable

Ground

Power (=2.5V)

Bi-directional Data Strobe (LQFP)

Bi-directional Data Strobe (FBGA)

Preliminary

M13S64322A

Pin Name

Function

DM0~DM3 DQ Mask enable in write cycle

CLK, CLK

CKE

VDDQ

VSSQ

VREF

Clock input

Clock enable

Chip select

Supply Voltage for DQ

Ground for DQ

Reference Voltage for SSTL-2

No connection

Elite Semiconductor Memory Technology Inc.

Publication Date : May. 2007

Revision : 0.5

4/49

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