M13S64322A Datasheet, PDF (35/49 Pages) Elite Semiconductor Memory Technology Inc. – 512K x 32 Bit x 4 Banks Double Data Rate Synchronous DRAM

ESMT
Preliminary
M13S64322A
Multi Bank Interleaving WRITE (@BL=4)
0
1
CLK
CLK
CKE
2
3
4
5
6
7
8
9
10
HIGH
CS
RAS
CAS
BA0,BA1
BAa
BAb
BAa
BAb
A8/AP
ADDR
(A0~A7,A9~A10)
WE
DQS
DQ
DM
COMMAND
Ra
Rb
tRRD
tRCDWR
Ra
Rb
Ca
Cb
Qa0 Qa1 Qa2 Qa3 Qb0 Qb
1
Qb2 Qb3
ACTIVE
tRCDWR
ACTIVE
WRITE
WRITE
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision : 0.5
35/49