M13S64322A Datasheet, PDF (40/49 Pages) Elite Semiconductor Memory Technology Inc. – 512K x 32 Bit x 4 Banks Double Data Rate Synchronous DRAM

ESMT
Preliminary
Read Interrupted by a Write & Burst stop (@BL=8, CL=3)
0
1
CLK
CLK
CKE
CS
RAS
CAS
BA0,BA1
BAa
A8/AP
ADDR
(A0~A7,A9~A10)
Ca
WE
2
3
4
5
6
7
HIGH
BAb
Cb
M13S64322A
8
9
10
DQS
DQ
DM
COMMAND
READ
Burst
Stop
Qa0 Qa1
Qb0 Qb1 Qb2 Qb3 Qb4 Qb5 Qb6 Qb7
WRITE
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision : 0.5
40/49