M14D5121632A_1 Datasheet, PDF (18/59 Pages) Elite Semiconductor Memory Technology Inc. – 8M x 16 Bit x 4 Banks DDR II SDRAM

ESMT
M14D5121632A
Operation Temperature Condition (TC) -40°C~95°C
De-rating Value of tDS/tDH with Differential DQS(DDR2-667)
DQS,
differential slew rate
4.0 V/ns
Δt_DS Δt_DH
3.0 V/ns
Δt_DS Δt_DH
2.0 V/ns
Δt_DS Δt_DH
1.8 V/ns
Δt_DS Δt_DH
1.6 V/ns
Δt_DS Δt_DH
1.4 V/ns
Δt_DS Δt_DH
1.2 V/ns
Δt_DS Δt_DH
1.0 V/ns
Δt_DS Δt_DH
0.8 V/ns
Δt_DS Δt_DH
Unit
2.0 +100 +45 +100 +45 +100 +45 -
-
-
-
-
-
-
-
-
-
-
- ps
1.5 +67 +21 +67 +21 +67 +21 +79 +33 -
-
-
-
-
-
-
-
-
- ps
1.0 0
0
0
0
0
0 +12 +12 +24 +24 -
-
-
-
-
-
-
- ps
0.9 -
-
-5 -14 -5 -14 +7 -2 +19 +10 +31 +22 -
-
-
-
-
- ps
0.8 -
-
-
- -13 -31 -1 -19 +11 -7 +23 +5 +35 +17 -
-
-
- ps
0.7 -
-
-
-
-
- -10 -42 +2 -30 +14 -18 +26 -6 +38 +6 -
- ps
0.6 -
-
-
-
-
-
-
- -10 -59 +2 -47 +14 -35 +26 -23 +38 -11 ps
0.5 -
-
-
-
-
-
-
-
-
- -24 -89 -12 -77 0 -65 +12 -53 ps
0.4 -
-
-
-
-
-
-
-
-
-
-
- -52 -140 -40 -128 -28 -116 ps
De-rating Value of tIS/tIH (DDR2-667)
CLK, CLK differential slew rate
2.0 V/ns
1.5 V/ns
Δt_IS
Δt_IH
Δt_IS
4.0
+150
+94
+180
3.5
+143
+89
+173
3.0
+133
+83
+163
2.5
+120
+75
+150
2.0
+100
+45
+130
1.5
+67
+21
+97
1.0
0
0
+30
0.9
-5
-14
+25
0.8
-13
-31
+17
0.7
-22
-54
+8
0.6
-34
-83
-4
0.5
-60
-125
-30
0.4
-100
-188
-70
0.3
-168
-292
-138
0.25
-200
-375
-170
0.2
-325
-500
-295
0.15
-517
-708
-487
0.1
-1000
-1125
-970
Δt_IH
+124
+119
+113
+105
+75
+51
+30
+16
-1
-24
-53
-95
-158
-262
-345
-470
-678
-1095
1.0 V/ns
Δt_IS
+210
+203
+193
+180
+160
+127
+60
+55
+47
+38
+26
0
-40
-108
-140
-265
-457
-940
Δt_IH
Unit
+154
ps
+149
ps
+143
ps
+135
ps
+105
ps
+81
ps
+60
ps
+46
ps
+29
ps
+6
ps
-23
ps
-65
ps
-128
ps
-232
ps
-315
ps
-440
ps
-648
ps
-1065
ps
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
18/59