PD45128441-I Datasheet, PDF (34/89 Pages) Elpida Memory – 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)

µPD45128441-I, 45128841-I, 45128163-I
13. Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 100 µs and then, execute Power on sequence and CBR (auto) Refresh before
proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Voltage on power supply pin relative to GND
Voltage on any pin relative to GND
Short circuit output current
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCC, VCCQ
VT
IO
PD
TA
Tstg
Condition
Rating
Unit
−0.5 to +4.6
V
−0.5 to +4.6
V
50
mA
1
W
−40 to + 85
°C
−55 to + 125
°C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply voltage
High level input voltage
Low level input voltage
Operating ambient temperature
Symbol
VCC, VCCQ
VIH
VIL
TA
Notes 1. VIH (MAX.) = VCC + 1.5 V (Pulse width ≤ 5 ns)
2. VIL (MIN.) = –1.5 V (Pulse width ≤ 5 ns)
Condition
MIN.
3.0
2.0
−0.3^Note2
−40
TYP.
3.3
MAX. Unit
3.6
V
VCC+0.3^Note1 V
+0.8
V
85
°C
Pin Capacitance (TA = 25 °C, f = 1 MHz)
Parameter
Symbol
Input capacitance
CI1
CI2
Data input / output capacitance
CI/O
Condition
MIN. TYP. MAX. Unit
CLK
2.5
3.5 pF
A0 - A11, BA0(A13), BA1(A12), CKE, 2.5
/CS, /RAS, /CAS, /WE, DQM, UDQM,
LDQM
DQ0 - DQ15
4
3.8
6.5 pF
34
Preliminary Data Sheet E0233N10