S6E1C3 Datasheet, PDF (94/107 Pages) Cypress Semiconductor – 32-bit ARM® Cortex®-M0+ FM0+ Microcontroller

S6E1C3 Series
11.8 Flash Memory Write/Erase Characteristics
(V_CC=1.65 V to 3.6 V, TA=- 40°C to +105°C)
Parameter
Sector erase time
Large
sector
Small
sector
Min
Value
Typ
Max
Unit
Remarks
-
-
1.1
2.7
0.3
0.9
s
The sector erase time includes the time of
writing prior to internal erase.
Halfword (16-bit) write time
-
30
528
μs
The halfword (16-bit) write time excludes the
system-level overhead.
Chip erase time
-
4.5
11.7
s
The chip erase time includes the time of
writing prior to internal erase.
*: The typical value is immediately after shipment, the maximum value is guarantee value under 10,000 cycle of erase/write.
Write/Erase Cycle and Data Hold Time
Write/Erase Cycle
Data Hold Time (Year)
Remarks
1,000
20*
10,000
10*
*: This value comes from the technology qualification (using Arrhenius equation to translate high temperature acceleration test
result into average temperature value at + 85°C).
Document Number: 002-00233 Rev.*B
Page 94 of 107