S6E1C3 Datasheet, PDF (57/107 Pages) Cypress Semiconductor – 32-bit ARM® Cortex®-M0+ FM0+ Microcontroller

S6E1C3 Series
11.4.3 Built-in CR Oscillation Characteristics
Built-in High-Speed CR
Parameter
Symbol
Conditions
(VCC= 1.65 V to 3.6 V, VSS = 0 V, TA=- 40°C to +105°C)
Value
Min
Typ
Max
Unit
Remarks
Clock frequency
Ta = - 10°C to + 105°C,
7.92
8
8.08 MHz
FCRH
After trimming *1
Ta = - 40°C to + 105°C,
7.84
8
8.16 MHz
Frequency
stabilization time
tCRWT
-
-
-
300
μs *2
*1: In the case of using the values in CR trimming area of Flash memory at shipment for frequency
trimming/temperature trimming.
*2: This is time from the trim value setting to stable of the frequency of the High-speed CR clock.
After setting the trim value, the period when the frequency stability time passes can use the High-speed CR clock as a source
clock.
Built-in Low-Speed CR
Parameter
Clock frequency
Symbol
fCRL
Conditions
-
(VCC= 1.65 V to 3.6 V, VSS= 0 V, TA=- 40°C to +105°C)
Value
Unit
Min Typ Max
Remarks
50
100
150 kHz
Document Number: 002-00233 Rev.*B
Page 57 of 107