S6J3350 Datasheet, PDF (244/249 Pages) Cypress Semiconductor – 32-bit Microcontroller Spansion® TraveoTM Family

PRELIMINARY
S6J3350 Series
9.1.6 FLASH memory
9.1.6.1 Electrical Characteristics
Parameter
Rating
Min
Typ
-
120
Sector erase time
-
120
-
120
16bit write time(Program)
-
30
32bit write time(Program)
-
30
64bit write time(Program)
-
30
256bit write time(Program)
-
40
Page mode write time(Program)
-
320
32bit write time(Work)
-
30
Erase count /
Data retention time(Program)^*3
1,000/20
years
-
1,000/20
years
Erase count /
Data retention time(Work)^*3
10,000/10
years
-
100,000/5
years
*1: Guaranteed value for up to 1,000 erases
*2: Guaranteed value for up to 100,000 erases
*3: Target Value
Max^*3
480
480
480
384
384
384
512
4096
384
-
Unit
ms
ms
ms
µs
µs
µs
µs
µs
µs
-
Remarks
Large sector^*1
Internal preprogramming time included
8kB sector^*1
Internal preprogramming time included
4kB sector^*1
Internal preprogramming time included
System-level overhead time excluded^*1
System-level overhead time excluded^*1
System-level overhead time excluded^*1
System-level overhead time excluded^*1
System-level overhead time excluded^*1
System-level overhead time excluded^*1
Temperature at write/erase time
Average temperature TA=+85 degrees
Celsius
Temperature at write/erase time
-
- Average temperature TA=+85 degrees
Celsius
9.1.6.2 Notes
While the Flash memory is written or erased, shutdown of the external power (Vcc5) is prohibited.
In the application system where Vcc5 might be shut down while writing or erasing, be sure to turn the
power off by using an external voltage detection function.
To put it concretely, after the external power supply voltage falls below the detection voltage (VDL), hold Vcc5 at 2.7V or more within
the duration calculated by the following expression:
Td^*1 [μs] + ( 1 / FCRF*2[MHz] ) x 1029 + 25 [μs]
*1: See "9.1.4.11 Low Voltage Detection (External Voltage)"
*2: See "9.1.4.1 Source clock timing"
Document Number: 002-10634 Rev.**
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