English
Language : 

SM55161A Datasheet, PDF (17/64 Pages) Austin Semiconductor – 262144 x 16 BIT VRAM MULTIPORT VIDEO RAM
Austin Semiconductor, Inc.
VRAM
SM55161A
Production
block write (continued)
A set of eight columns makes a block, resulting in 64 blocks
along one row. Block 0 comprises columns 0 –7,
block 1 comprises columns 7 –15, block 2 comprises columns 16
–23, etc., as shown in Figure 11.
During block-write cycles, only the six most significant
column addresses (A3–A8) are latched on the first falling edge
of CASx to decode one of the 64 blocks. Address bits A0–A2
are ignored. Each 2M-bit half has the same block selected.
A block-write cycle is entered in a manner similar to a DRAM
write cycle except DSF is held high on the first falling edge of
CASx\. As in a DRAM write operation, CASL\ and CASU\
enable the corresponding lower and upper DRAM DQ bytes to
be written. The column-mask data is input via the DQs and is
latched on either the first falling edge of CASx\ or the falling
edge of WE\, whichever occurs later. The 16-bit color-data
register must be loaded prior to performing a block write as
described below. Refer to the write-per-bit section for details on
use of the write-mask capability, allowing additional performance
options.
Column-address bits A0 and A2 are ignored. Block 0 (columns
0 –7) is selected for each 2M-bit half. The first half has
DQ0–DQ2 written with bits 0–2 from the color-data register
(101) to first four columns of block 0. DQ3 is not written and
retains its previous data due to write-mask-register-bit 3
being 0. DQ4–DQ7 has all four columns masked off due to
column-mask bits 4–7 being 0 so that no data is written.
The second half (DQ8–DQ11 ) has its four DQs written
with bits 8 –11 from the color-data register (1100) to columns
1–3 of its block 0. Column 0 is not written and retains its previ-
ous data on all four DQs due to column-mask-register-bit 8
being 0.
DQ12–DQ15 has DQ12, DQ14, and DQ15 written with bits
12, 14, and 15 from the color-data register to column 0 and
column 2 of its block 0. DQ13 retains its previous data on all
columns due to the write mask. Columns 1 and 3 retain their
previous data on all DQs due to the column mask. If the previ-
ous data for DQ12-DQ15 is all 0s, the upper half (DQ12-DQ15)
contains the data pattern shown in Figure 12 after the block-
write operation shown in the previous example.
Example of block write:
Block-write column address = 110000000
(A0–A8 from left to right)
Color-data register =
Write-mask register =
Column-mask register =
bit 0
1011
1110
1111
1st
Quad
1011
1111
0000
2nd
Quad
1100
1111
0111
3rd
Quad
bit 15
0111
1011
1010
4th
Quad
FIGURE 12: Example of Upper
DQ12-DQ15 After A Block-Write
Operation With Previous Data Of 0
FIGURE 11: Block Columns Organization
SMJ55161A
Rev. 1.6 03/05
17
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.