EPM240 Datasheet, PDF (61/86 Pages) Altera Corporation – JTAG & In-System Programmability

Chapter 5: DC and Switching Characteristics
5–3
Operating Conditions
Programming/Erasure Specifications
Table 5–3 shows the MAX II device family programming/erasure specifications.
Table 5–3. MAX II Device Programming/Erasure Specifications
Parameter
Minimum
Typical
Maximum
Erase and reprogram cycles
—
—
100 (1)
Note to Table 5–3:
(1) This specification applies to the UFM and configuration flash memory (CFM) blocks.
Unit
Cycles
DC Electrical Characteristics
Table 5–4 shows the MAX II device family DC electrical characteristics.
Table 5–4. MAX II Device DC Electrical Characteristics (Note 1) (Part 1 of 2)
Symbol
Parameter
Conditions
Minimum Typical Maximum Unit
I_I
Input pin leakage
V_I = V_CCIOmax to 0 V (2)
–10
—
10
µA
current
I_OZ
Tri-stated I/O pin
V_O = V_CCIOmax to 0 V (2)
–10
—
10
µA
leakage current
I_CCSTANDBY
V_CCINT supply current
(standby) (3)
MAX II devices
MAX IIG devices
—
12
—
mA
—
2
—
mA
EPM240Z
—
29
150
µA
EPM570Z
—
32
210
µA
V_SCHMITT (4)
I_CCPOWERUP
Hysteresis for Schmitt
trigger input (5)
V_CCINT supply current
during power-up (6)
V_CCIO = 3.3 V
V_CCIO = 2.5 V
MAX II devices
MAX IIG and MAX IIZ
devices
—
400
—
mV
—
190
—
mV
—
55
—
mA
—
40
—
mA
R_PULLUP
Value of I/O pin pull-up
resistor during user
mode and in-system
programming
V_CCIO = 3.3 V (7)
V_CCIO = 2.5 V (7)
V_CCIO = 1.8 V (7)
V_CCIO = 1.5 V (7)
5
—
25
kΩ
10
—
40
kΩ
25
—
60
kΩ
45
—
95
kΩ
© Novermber 2008 Altera Corporation
MAX II Device Handbook