W942508CH Datasheet, PDF (47/47 Pages) Winbond – 8M x 4 BANKS x 8 BIT DDR SDRAM

W942508CH
12. REVISION HISTORY
REVISION
DATE
Aug. 28, 2002
A1
Jan. 9, 2003
Feb. 14, 2003
A2
Feb. 14, 2003
A3
May 21, 2003
PAGE
-
28
-
10
DESCRIPTION
Preliminary datasheet
Add CAS Latency = 3 option
Modified AC timing spec.
Change IDD2p current to 8 mA
Change IDD6 current to 9 mA
Add CL2.5 optional in DDR400
Headquarters
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: [phone]
FAX: [phone]
http://www.winbond.com.tw/
Taipei Office
9F, No.480, Rueiguang Rd.,
Neihu District, Taipei, 114,
Taiwan, R.O.C.
TEL: [phone]
FAX: [phone]
Winbond Electronics Corporation America
2727 North First Street, San Jose,
CA 95134, U.S.A.
TEL: [phone]
FAX: [phone]
Winbond Electronics (Shanghai) Ltd.
27F, 2299 Yan An W. Rd. Shanghai,
200336 China
TEL: [phone]
FAX: [phone]
Winbond Electronics Corporation Japan
7F Daini-ueno BLDG, 3-7-18
Shinyokohama Kohoku-ku,
Yokohama, 222-0033
TEL: [phone]
FAX: [phone]
Winbond Electronics (H.K.) Ltd.
Unit 9-15, 22F, Millennium City,
No. 378 Kwun Tong Rd.,
Kowloon, Hong Kong
TEL: [phone]
FAX: [phone]
Please note that all data and specifications are subject to change without notice.
All the trade marks of products and companies mentioned in this data sheet belong to their respective owners.
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Publication Release Date: May 21, 2003
Revision A3