W972GG6JB-18-TR Datasheet, PDF (38/87 Pages) Winbond – 16M 8 BANKS 16 BIT DDR2 SDRAM

W972GG6JB
10.4 ODT DC Electrical Characteristics
PARAMETER/CONDITION
SYM. MIN. NOM. MAX. UNIT NOTES
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 Ω Rtt1(eff) 60
75
90
Ω
1
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 Ω Rtt2(eff) 120
150
180
Ω
1
Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 Ω Rtt3(eff) 40
50
60
Ω
1, 2
Deviation of VM with respect to VDDQ/2
ΔVM
-6
+6
%
1
Notes:
1. Test condition for Rtt measurements.
2. Optional for DDR2-667, mandatory for DDR2-800 and DDR2-1066.
Measurement Definition for Rtt(eff):
Apply VIH (ac) and VIL (ac) to test pin separately, then measure current I(VIH (ac)) and I(VIL (ac))
respectively. VIH (ac), VIL (ac), and VDDQ values defined in SSTL_18.
Rtt(eff) = (VIH(ac) – VIL(ac)) /(I(VIHac) – I(VILac))
Measurement Definition for ΔVM:
Measure voltage (VM) at test pin (midpoint) with no load.
ΔVM = ((2 x Vm / VDDQ) – 1) x 100%
10.5 Input DC Logic Level
PARAMETER
DC input logic HIGH
DC input logic LOW
SYM.
VIH(dc)
VIL(dc)
MIN.
VREF + 0.125
-0.3
MAX.
VDDQ + 0.3
VREF - 0.125
UNIT
V
V
10.6 Input AC Logic Level
PARAMETER SYM.
-18
MIN.
MAX.
-25/25I/-3I
MIN.
MAX.
UNIT
AC input logic HIGH VIH (ac) VREF + 0.200

VREF + 0.200 VDDQ + VPEAK¹
V
AC input logic LOW VIL (ac)

VREF - 0.200 VSSQ - VPEAK¹
VREF - 0.200
V
Note:
1. Refer to the page 67 sections 10.14.1 and 10.14.2 AC Overshoot/Undershoot specification table for VPEAK value: maximum
peak amplitude allowed for Overshoot/Undershoot.
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Publication Release Date: Jul. 28, 2014
Revision: A03