W981216AH Datasheet, PDF (36/44 Pages) Winbond – 2M x 16 bit x 4 Banks SDRAM

W981216AH
Autoprecharge timing ( Write Cycle )
2M x 16 bit x 4 Banks SDRAM
(3) CAS Latency=4
( a ) burst length = 1
Command
DQ
( b ) burst length = 2
Command
DQ
( c ) burst length = 4
Command
DQ
( d ) burst length = 8
Command
DQ
0
1
2
3
4
Write AP
Act
tWR
tRP
D0
Write
AP
tWR
tRP
D0 D1
Write
AP
tWR
D0 D1 D2 D3
Write
D0 D1 D2 D3 D4
5
6
Act
tRP
D5 D6
7
8
Act
AP
tWR
D7
9 10 11
Act
tRP
Note )
Write
represents the Read with Auto precharge command.
AP
represents the start of internal precharging.
Act
represents the Bank Activate command.
When the Auto precharge command is asserted, the period from Bank Activate
command to the start of internal precgarging must be at least tRAS(min).
Revision 1.0
- 36 -
Publication Release Date: March, 1999