W981216AH Datasheet, PDF (12/44 Pages) Winbond – 2M x 16 bit x 4 Banks SDRAM

W981216AH
2M x 16 bit x 4 Banks SDRAM
Table 2 Address Sequence of Sequential Mode
DATA
Data 0
Data 1
Data 2
Data 3
Data 4
Data 5
Data 6
Data 7
Access Address
n
n+1
n+2
n+3
n+4
n+5
n+6
n+7
Burst Length
BL= 2 (disturb address is A0)
No address carry from A0 to A1
BL= 4 (disturb addresses are A0 and A1)
No address carry from A1 to A2
BL= 8 (disturb addresses are A0, A1 and A2)
No address carry from A2 to A3
. Addressing Sequence of Sequential Mode
A column access is performed by increasing the address from the column address which is input to the
device. The disturb address is varied by the Burst Length as shown in Table 2.
. Addressing Sequence of Interleave Mode
A column access is started in the input column address and is performed by inverting the address bit in the
sequence shown in Table 3.
Table 3 Address Sequence of Interleave Mode
DATA
Data 0
Data 1
Data 2
Data 3
Data 4
Data 5
Data 6
Data 7
Access Address
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
Burst Length
BL = 2
BL = 4
BL = 8
Revision 1.0
- 12 -
Publication Release Date: March, 1999