DRV8305-Q1_16 Datasheet, PDF (6/54 Pages) Texas Instruments – Three-Phase Automotive Gate Driver

DRV8305-Q1
SLVSD12A – MAY 2015 – REVISED MARCH 2016
www.ti.com
6.2 ESD Ratings
V_(ESD)
Electrostatic
discharge
Human-body model (HBM), per AEC Q100-002 ⁽¹⁾
Charged-device model (CDM), per AEC Q100-011
VALUE
±2000
±500
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
UNIT
V
6.3 Recommended Operating Conditions
over operating temperature range (unless otherwise noted)
PVDD
PVDD
VCPH
VCP_LSD
I_GATE
f_gate
VREG
C_{O_OPA}
I_nFAULT
T_A
T_J
Power supply voltage range
Power supply voltage range for voltage regulator operation
Charge pump external load current
Low-side regulator external load current
Total average gate drive current (HS + LS)
Operating switching frequency of gate driver
Voltage regulator external load current (regulator enabled device options)
Maximum external capacitive load on shunt amplifier output (without
external resistor)
nFAULT sink current (nFAULT = 0.3 V)
Operating ambient temperature, DRV8305xQPHPQ1
Operating ambient temperature, DRV8305xEPHPQ1
Operating junction temperature, DRV8305xQPHPQ1
Operating junction temperature, DRV8305xEPHPQ1
MIN
MAX
UNIT
4.4
45
V
4.3
45
V
0
30
mA
0
30
mA
0
30
mA
0
200
kHz
0
50
mA
0
60
pF
0
7
mA
–40
125
°C
–40
150
°C
–40
150
°C
–40
175
°C
6.4 Thermal Information
THERMAL METRIC ⁽¹⁾
DRV8305-Q1
PHP (HTQFP)
UNIT
48 PINS
R_θJA
R_θJC(top)
R_θJB
ψ_JT
ψ_JB
R_θJC(bot)
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
26.6
°C/W
12.9
°C/W
7.6
°C/W
0.3
°C/W
7.5
°C/W
0.6
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6
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