DRV8305-Q1_16 Datasheet, PDF (1/54 Pages) Texas Instruments – Three-Phase Automotive Gate Driver

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DRV8305-Q1
SLVSD12A – MAY 2015 – REVISED MARCH 2016
DRV8305-Q1 Three-Phase Automotive Gate Driver With Three Integrated Current Shunt
Amplifiers and Voltage Regulator
1 Features
•1 AEC-Q100 Qualified for Automotive Applications
• Ambient Operating Temperature Ranges:
– Temperature Grade 0 (E): –40°C to 150°C
– Temperature Grade 1 (Q): –40°C to 125°C
• 4.4-V to 45-V Operating Voltage
• 1.25-A and 1-A Peak Gate Drive Currents
• Programmable High- and Low-Side Slew-Rate
Control
• Charge-Pump Gate Driver for 100% Duty Cycle
• Three Integrated Current-Shunt Amplifiers
• Integrated 50-mA LDO (3.3-V and 5-V Option)
• 3-PWM or 6-PWM Input Control up to 200 kHz
• Single PWM-Mode Commutation Capability
• Supports Both 3.3-V and 5-V Digital Interface
• Serial Peripheral Interface (SPI) for Device
Settings and Fault Reporting
• Thermally-Enhanced 48-Pin HTQFP
• Protection Features:
– Fault Diagnostics and MCU Watchdog
– Programmable Dead-Time Control
– MOSFET Shoot-Through Prevention
– MOSFET V_DS Overcurrent Monitors
– Gate-Driver Fault Detection
– Reverse Battery-Protection Support
– Limp Home-Mode Support
– Overtemperature Warning and Shutdown
2 Applications
• Three-Phase BLDC and PMSM Motors
• Automotive Fuel and Water Pumps
• Automotive Fans and Blowers
3 Description
The DRV8305-Q1 device is a gate driver IC for three-
phase motor-drive applications. The device provides
three high-accuracy and temperature compensated
half-bridge drivers, each capable of driving a high-
side and low-side N-channel MOSFET. A charge
pump driver supports 100% duty cycle and low-
voltage operation for cold crank situations. The
device can tolerate load dump voltages up to 45-V.
The DRV8305-Q1 device includes three bidirectional
current-shunt amplifiers for accurate low-side current
measurements that support variable gain settings and
an adjustable offset reference.
The DRV8305-Q1 device has an integrated voltage
regulator to support an MCU or other system power
requirements. The voltage regulator can be interfaced
directly with a LIN physical interface to allow low
system standby and sleep currents.
The gate driver uses automatic handshaking when
switching to prevent current shoot through. The V_DS
of both the high-side and low-side MOSFETs is
accuractely sensed to protect the external MOSFETs
from overcurrent conditions. The SPI provides
detailed fault reporting, diagnostics, and device
configurations such as gain options for the current
shunt amplifier, individual MOSFET overcurrent
detection, and gate-drive slew-rate control.
Device Options:
• DRV8305NQ: Grade 1 with voltage refernece
• DRV83053Q: Grade 1 with 3.3-V, 50-mA LDO
• DRV83055Q: Grade 1 with 5-V, 50-mA LDO
• DRV8305NE: Grade 0 with voltage reference
Device Information ⁽¹⁾
PART NUMBER
PACKAGE
BODY SIZE (NOM)
DRV8305-Q1
HTQFP (48)
7.00 mm × 7.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
4.4 to 45 V
EN_GATE
DRV8305-Q1
PWM
Automotive
3-Phase
Gate Drive
SPI
Brushless
Gate Driver
M
Shunt Amps
nFAULT
LDO
Sense
50-mA LDO
Shunt Amps
Protection
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCT PREVIEW Information. Product in design phase of
development. Subject to change or discontinuance without notice.