M36DR432AD Datasheet, PDF (50/52 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

M36DR432AD, M36DR432BD
Table 35. Device Geometry Definition
Offset Word
Mode
27h
28h
29h
2Ah
2Bh
2Ch
Data
0016h
0001h
0000h
0000h
0000h
0002h
Description
Device Size = 2ⁿ in number of bytes
Flash Device Interface Code description: Asynchronous x16
Maximum number of bytes in multi-byte program or page = 2ⁿ
Number of Erase Block Regions within device
bit 7 to 0 = x = number of Erase Block Regions
Note:1. x = 0 means no erase blocking, i.e. the device erases at once in "bulk."
2. x specifies the number of regions within the device containing one or more
contiguous Erase Blocks of the same size. For example, a 128KB device
(1Mb) having blocking of 16KB, 8KB, four 2KB, two 16KB, and one 64KB is
considered to have 5 Erase Block Regions. Even though two regions both
contain 16KB blocks, the fact that they are not contiguous means they are
separate Erase Block Regions.
3. By definition, symmetrically block devices have only one blocking region.
M36DR432AD M36DR432AD Erase Block Region Information
2Dh
003Eh
bit 31 to 16 = z, where the Erase Block(s) within this Region are (z) times 256 bytes
2Eh
0000h
in size. The value z = 0 is used for 128 byte block size.
2Fh
0000h
e.g. for 64KB block size, z = 0100h = 256 => 256 * 256 = 64K
30h
0001h
bit 15 to 0 = y, where y+1 = Number of Erase Blocks of identical size within the Erase
31h
0007h
Block Region:
32h
0000h
e.g. y = D15-D0 = FFFFh => y+1 = 64K blocks [maximum number]
y = 0 means no blocking (# blocks = y+1 = "1 block")
33h
0020h
Note: y = 0 value must be used with number of block regions of one as indicated
34h
0000h
by (x) = 0
M36DR432AD M36DR432AD
2Dh
0007h
2Eh
0000h
2Fh
0020h
30h
0000h
31h
003Eh
32h
0000h
33h
0000h
34h
0001h
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