M36DR432AD Datasheet, PDF (43/52 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

M36DR432AD, M36DR432BD
Table 25. SRAM Low V_DDS Data Retention Characteristics ^{(1, 2)}
Symbol
Parameter
Test Condition
I_DDDR Supply Current (Data Retention)
V_DDS = 1.0V, ES ≥ V_DDS – 0.2V
no input may exceed V_DDS + 2V
V_DR Supply Voltage (Data Retention)
ES ≥ V_DDS – 0.2V
t_CDR
Chip Disable to Data Retention
Time
ES ≥ V_DDS – 0.2V
t_R Operation Recovery Time
Note: 1. All other Inputs V_IH ≤ V_DDS – 0.2V or V_IL ≤ 0.2V.
2. Sampled only. Not 100% tested.
Min Typical Max Unit
0.5
10 µA
1
2.2 V
0
ns
t_RC
ns
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