M36DR432AD Datasheet, PDF (37/52 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

M36DR432AD, M36DR432BD
Table 22. Flash Data Polling and Toggle Bits AC Characteristics
Symbol
Parameter
t_WHQ7V
Write Enable High to DQ7 Valid (Program, WF Controlled)
Write Enable High to DQ7 Valid (Block Erase, WF Controlled)
t_EHQ7V
Chip Enable High to DQ7 Valid (Program, EF Controlled)
Chip Enable High to DQ7 Valid (Block Erase, EF Controlled)
t_Q7VQV
Q7 Valid to Output Valid (Data Polling)
t_WHQV
Write Enable High to Output Valid (Program)
Write Enable High to Output Valid (Block Erase)
t_EHQV
Chip Enable High to Output Valid (Program)
Chip Enable High to Output Valid (Block Erase)
Note: All other timings are defined in Read AC Characteristics
M36DR432AD,
M36DR432BD
Min
Max
8
100
0.8
4
8
100
0.8
4
0
8
100
0.8
4
8
100
0.8
4
Unit
µs
s
µs
s
ns
µs
s
µs
s
Figure 15. Flash Data Polling Flowchart
Figure 16. Flash Data Toggle Flowchart
START
READ DQ5 & DQ7
at VALID ADDRESS
DQ7
=
DATA
NO
YES
NO _DQ5
=1
YES
READ DQ7
START
READ
DQ5 & DQ6
DQ= 6
NO
TOGGLES
YES
NO _DQ5
=1
YES
READ DQ6
DQ7
=
DATA
NO
YES
FAIL
PASS
AI06197
DQ= 6
NO
TOGGLES
YES
FAIL
PASS
AI06198
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