M36DR432AD Datasheet, PDF (26/52 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

M36DR432AD, M36DR432BD
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in Table 14, Operating
and AC Measurement Conditions. Designers
should check that the operating conditions in their
circuit match the operating conditions when rely-
ing on the quoted parameters.
Table 14. Operating and AC Measurement Conditions
SRAM
Parameter
70
Min Max
V_DDF Supply Voltage
-
-
V_DDS Supply Voltage
1.65 2.2
V_PPF Supply Voltage
Ambient Operating Temperature
– 40
85
Load Capacitance (C_L)
30
5
Input Rise and Fall Times
2
Input Pulse Voltages⁽¹⁾
0 to V_DD
Input and Output Timing Ref. Voltages⁽¹⁾
V_DD/2
Note: 1. VDD = VDDS = VDDF
Flash
85
100, 120
Min Max Min Max
1.8
2.2
1.65
2.2
-
-
-
-
11.4 12.6 11.4 12.6
– 40
85
– 40
85
30
30
4
4
0 to V_DD
0 to V_DD
V_DD/2
V_DD/2
Units
V
V
V
°C
pF
ns
V
V
Figure 6. AC Measurement I/O Waveform
VDD
0V
Note: V_DD means V_DDF = V_DDS
VDD/2
AI90206
Figure 7. AC Measurement Load Circuit
VDD
VDD
DEVICE
UNDER
TEST
0.1µF
CL = 50pF
25kΩ
25kΩ
Table 15. Device Capacitance
Symbol
Parameter
C_IN
Input Capacitance
C_OUT
Output Capacitance
Note: Sampled only, not 100% tested.
CL includes JIG capacitance
Note: V_DD means V_DDF = V_DDS
Test Condition
V_IN = 0V
V_OUT = 0V
Min
Max
12
15
AI90207
Unit
pF
pF
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