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M36DR432AD Datasheet, PDF (28/52 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
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M36DR432AD, M36DR432BD
Table 17. SRAM DC Characteristics
(TA = –40 to 85°C; VDDF = VDDS = 1.65V to 2.2V)
Symbol
Parameter
Test Condition
Min Typ
Max
Unit
IOZ
Output Leakage
Current
0V ≤ VOUT ≤ VDDS, output disabled
-1
+1
+1
µA
IIX
Input Load Current
0V ≤ VIN ≤ VDDS
-1
±1
+1
µA
IDDS
VDD Standby
Current
ES ≥ VDDS – 0.2V, VIN ≥ VDDS – 0.2V
or VIN ≤ 0.2V, f=0
VDDS = 2.2V
1
10
µA
IOUT = 0 mA, f = fMAX = 1/tRC, CMOS levels
IDD
Supply Current
VDDS = 2.2V
IOUT = 0 mA, f = 0Hz
CMOS levels
4
7
mA
1
5
mA
VIL
Input Low Voltage
VDDS = 1.65V
–0.5
0.4
V
VIH
Input High Voltage
VDDS = 2.2V
1.4
VDDS +0.2V V
VOL Output Low Voltage
VDDS = 1.65V
IOL = 0.1µA
0.2
V
VOH Output High Voltage
VDDS = 1.65V
IOH = –0.1µA
1.4
V
Note: 1. IDDES and IDDWS are specified with device deselected. If device is read while in erase suspend, current draw is sum of IDDES
and IDDR. If the device is read while in program suspend, current draw is the sum of IDDWS and IDDR.
2. VIN = VIL or VIH
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