M36DR432AD Datasheet, PDF (32/52 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

M36DR432AD, M36DR432BD
Figure 10. Flash Write AC Waveforms, Write Enable Controlled
A0-A20
tAVAV
VALID
tWLAX
tAVWL
EF
tELWL
GF
tGHWL
tWLWH
WF
DQ0-DQ15
tDVWH
VALID
tWHEH
tWHGL
tWHWL
tWHDX
VDDF
tVDHEL
Note: Addresses are latched on the falling edge of WF, Data is latched on the rising edge of WF.
AI07314
Table 19. Flash Write AC Characteristics, Write Enable Controlled
M36DR432AD, M36DR432BD
Symbol Alt
Parameter
85
100
120
Min Max Min Max Min Max
t_AVAV t_WC Address Valid to Next Address Valid
85⁽¹⁾
100
120
t_ELWL t_CS Chip Enable Low to Write Enable Low
0
0
0
t_WLWH t_WP Write Enable Low to Write Enable High ₅₀⁽¹⁾
50
50
t_DVWH t_DS Input Valid to Write Enable High
40⁽¹⁾
50
50
t_WHDX t_DH Write Enable High to Input Transition
0
0
0
t_WHEH t_CH Write Enable High to Chip Enable High
0
0
0
t_WHWL t_WPH Write Enable High to Write Enable Low
30
30
30
t_AVWL t_AS Address Valid to Write Enable Low
0
0
0
t_WLAX t_AH Write Enable Low to Address Transition
50
50
50
t_GHWL
Output Enable High to Write Enable Low 0
0
0
t_VDHEL t_VCS V_DD High to Chip Enable Low
50
50
50
t_WHGL t_OEH Write Enable High to Output Enable Low 30
30
30
t_PLQ7V
RPF Low to Reset Complete During
Program/Erase
15
15
15
Note: 1. To be characterized.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
µs
32/52