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M36DR432AD Datasheet, PDF (27/52 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
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M36DR432AD, M36DR432BD
Table 16. Flash DC Characteristics
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ILI Input Leakage Current
0V ≤ VIN ≤ VDD
±1
µA
ILO Output Leakage Current
0V ≤ VOUT ≤ VDD
±5
µA
ICC1
Supply Current
(Read Mode)
EF = VIL, GF = VIH, f =
6MHz
3
6
mA
ICC2
Supply Current
(Power-Down)
RPF = VSS ± 0.2V
2
10
µA
ICC3 Supply Current (Standby)
EF = VDD ± 0.2V
10
50
µA
ICC4 (1)
Supply Current
(Program or Erase)
Word Program, Block Erase
in progress
10
20
mA
ICC5 (1)
Supply Current
(Dual Bank)
Program/Erase in progress
in one Bank, Read in the
other Bank
13
26
mA
IPPF1
VPPF Supply Current
(Program or Erase)
VPPF = 12V ± 0.6V
2
5
mA
IPPF2
VPPF Supply Current
(Standby or Read)
VPPF ≤ VDD
VPPF = 12V ± 0.6V
0.2
5
µA
100
400
µA
VIL Input Low Voltage
–0.5
0.4
V
VIH Input High Voltage
VDD – 0.4
VDD + 0.4
V
VOL Output Low Voltage
IOL = 100µA
0.1
V
VOH
Output High Voltage
CMOS
IOH = –100µA
VDD –0.1
V
VPPF(2,3)
VPPF Supply Voltage
(Program or Erase)
–0.4
Double Word Program
11.4
VDD + 0.4
V
12.6
V
Note: 1. Sampled only, not 100% tested.
2. VPPF may be connected to 12V power supply for a total of less than 100 hrs.
3. For standard program/erase operation VPPF is don’t care.
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