M36DR432AD Datasheet, PDF (31/52 Pages) STMicroelectronics – 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

M36DR432AD, M36DR432BD
Table 18. Flash Read AC Characteristics
M36DR432AD, M36DR432BD
Symbol Alt
Parameter
Test Condition
85
100
120
Min Max Min Max Min Max
t_AVAV
t_RC
Address Valid to Next
Address Valid
EF = V_IL, GF = V_{IL 85}⁽³⁾
100
120
t_AVQV
t_ACC
Address Valid to
Output Valid (Random)
EF = V_IL, GF = V_IL
85⁽³⁾
100
120
t_AVQV1
t_PAGE
Address Valid to
Output Valid (Page)
EF = V_IL, GF = V_IL
30⁽³⁾
35
45
t_ELQX ⁽¹⁾
t_LZ
Chip Enable Low to
Output Transition
GF = V_IL
0
0
0
t_ELQV ⁽²⁾
t_CE
Chip Enable Low to
Output Valid
GF = V_IL
85⁽³⁾
100
120
t_GLQX ⁽¹⁾
t_OLZ
Output Enable Low to
Output Transition
EF = V_IL
0
0
0
t_GLQV ⁽²⁾
t_OE
Output Enable Low to
Output Valid
EF = V_IL
25⁽³⁾
25
35
t_EHQX
t_OH
Chip Enable High to
Output Transition
GF = V_IL
0
0
0
t_EHQZ ⁽¹⁾
t_HZ
Chip Enable High to
Output Hi-Z
GF = V_IL
20⁽³⁾
25
35
t_GHQX
t_OH
Output Enable High to
Output Transition
EF = V_IL
0
0
0
t_GHQZ ⁽¹⁾
t_DF
Output Enable High to
Output Hi-Z
EF = V_IL
20⁽³⁾
25
35
t_AXQX
t_OH
Address Transition to
Output Transition
EF = V_IL, GF = V_IL
0
0
0
Note: 1. Sampled only, not 100% tested.
2. GF may be delayed by up to t_ELQV - t_GLQV after the falling edge of EF without increasing t_ELQV.
3. To be characterized.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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