M36W0R6030T0 Datasheet, PDF (17/26 Pages) STMicroelectronics – 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

M36W0R6030T0, M36W0R6030B0
Table 9. Read AC Characteristics
Symbol Alt
Parameter
M36W0R6030T0, M36W0R6030B0
Unit
Min
Max
t_AVAV
t_E1LE1H
t_E2HE2L
t_RC Read Cycle Time
70
ns
t_AVQV
t_AA Address Valid to Output Valid
70
ns
t_AVQX t_OHA Address Transition to Output Transition
10
ns
t_BHQZ(2) ^tHZBE Byte Enable High to Data Hi-Z
25
ns
t_BLQV t_DBE Byte Enable Low to Data Valid
70
ns
t_BLQX(2) ^tLZBE Byte Enable Low to Data Transition
5
ns
t_E1HQZ
t_E2LQZ
t_HZCE
Chip Enable 1 High or Chip Enable 2 Low to Data
Hi-Z
25
ns
t_E1LQV
t_E2HQV
t_ACE
Chip Enable 1 Low or Chip Enable 2 High to Data
Valid
70
ns
t_E1LQX
t_E2HQX
t_LZCE
Chip Enable 1 Low or Chip Enable 2 High to Data
Transition
10
ns
t_GHQZ t_HZOE Output Enable High to Data Hi-Z
25
ns
t_GLQV t_DOE Output Enable Low to Data Valid
35
ns
t_GLQX t_LZOE Output Enable Low to Data Transition
5
ns
t_PD(1)
Chip Enable 1 High or Chip Enable 2 Low to
Power Down
70
ns
t_PU(1)
Chip Enable 1 Low or Chip Enable 2 High to
Power Up
0
ns
Note: 1. Sampled only. Not 100% tested.
2. Whatever the temperature and voltage, t_E1HDZ and t_E2LDZ are less than t_E1LDX and t_E2HDX; t_BHDZ is less than t_BLDX and, t_GHDZ is
less than t_GHDX.
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