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M36W0R6030T0 Datasheet, PDF (14/26 Pages) STMicroelectronics – 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
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M36W0R6030T0, M36W0R6030B0
Table 6. Flash Memory DC Characteristics - Currents
Symbol
Parameter
Test Condition
Min
Typ
ILI Input Leakage Current
0V ≤ VIN ≤ VDDQ
ILO Output Leakage Current
0V ≤ VOUT ≤ VDDQ
Supply Current
Asynchronous Read (f=6MHz)
E = VIL, G = VIH
3
4 Word
7
Supply Current
8 Word
10
Synchronous Read (f=54MHz)
16 Word
12
IDD1
Continuous
13
4 Word
8
Supply Current
8 Word
11
Synchronous Read (f=66MHz)
16 Word
14
Continuous
16
IDD2 Supply Current (Reset)
RP = VSS ± 0.2V
10
IDD3 Supply Current (Standby)
E = VDD ± 0.2V
10
IDD4 Supply Current (Automatic Standby)
E = VIL, G = VIH
10
VPP = VPPH
8
Supply Current (Program)
IDD5 (1)
VPP = VDD
10
VPP = VPPH
8
Supply Current (Erase)
VPP = VDD
10
IDD6 (1,2)
Supply Current
(Dual Operations)
Program/Erase in one
Bank, Asynchronous
13
Read in another Bank
Program/Erase in one
Bank, Synchronous
23
Read in another Bank
IDD7(1)
Supply Current Program/ Erase
Suspended (Standby)
E = VDD ± 0.2V
10
VPP = VPPH
2
VPP Supply Current (Program)
IPP1(1)
VPP = VDD
0.2
VPP = VPPH
2
VPP Supply Current (Erase)
VPP = VDD
0.2
IPP2 VPP Supply Current (Read)
VPP ≤ VDD
0.2
IPP3(1) VPP Supply Current (Standby)
VPP ≤ VDD
0.2
Note: 1. Sampled only, not 100% tested.
2. VDDF Dual Operation current is the sum of read and program or erase currents.
Max
Unit
±1
µA
±1
µA
6
mA
16
mA
18
mA
22
mA
25
mA
17
mA
20
mA
25
mA
30
mA
50
µA
50
µA
50
µA
15
mA
20
mA
15
mA
20
mA
26
mA
45
mA
50
µA
5
mA
5
µA
5
mA
5
µA
5
µA
5
µA
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