M36W0R6030T0 Datasheet, PDF (15/26 Pages) STMicroelectronics – 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

M36W0R6030T0, M36W0R6030B0
Table 7. Flash Memory DC Characteristics - Voltages
Symbol
Parameter
Test Condition
V_IL Input Low Voltage
V_IH Input High Voltage
V_OL Output Low Voltage
I_OL = 100µA
V_OH Output High Voltage
I_OH = –100µA
V_PP1 V_PP Program Voltage-Logic
Program, Erase
V_PPH V_PP Program Voltage Factory
Program, Erase
V_PPLK Program or Erase Lockout
V_LKO V_DD Lock Voltage
V_RPH RP pin Extended High Voltage
Min
Typ
Max
Unit
–0.5
0.4
V
V_DDQ –0.4
V_DDQ + 0.4 V
0.1
V
V_DDQ –0.1
V
1.1
1.8
3.3
V
11.4
12
12.6
V
0.4
V
1
V
3.3
V
Table 8. SRAM DC Characteristics
Symbol Parameter
Test Condition
I_LI
Input Leakage
Current
0V ≤ V_IN ≤ V_DD
I_LO
Output Leakage
Current
0V ≤ V_OUT ≤ V_DD, Output disabled
I_DDS
V_DD Standby
Current
E1_S ≥ V_DD – 0.2V or E2_S ≤ 0.2V
V_IN ≥ V_DD – 0.2V or V_IN ≤ 0.2V
f = f_max (Address and Data inputs only)
f = 0 (G_S, W_S, UB_S and LB_S)
E1_S ≥ V_DD – 0.2V or E2_S ≤ 0.2V
V_IN ≥ V_DD – 0.2V or V_IN ≤ 0.2V
f = 0, V_DD(max)
I_DD Supply Current
f = f_max = 1/t_AVAV, CMOS levels V_DD = V_DD(max)
I_OUT = 0 mA, f = 1MHz, CMOS levels
V_IL
Input Low
Voltage
V_IH
Input High
Voltage
V_OL
Output Low
Voltage
I_OL = 0.1mA, V_DD = 1.65V
V_OH
Output High
Voltage
I_OH = −0.1mA, V_DD = 1.65V
Min Typ
Max Unit
±1
µA
±1
µA
2
25
µA
2
25
µA
8
1
–0.2
15 mA
5
mA
0.4
V
1.4
V_DD+0.2 V
0.2
V
1.4
V
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