M36W0R6030T0 Datasheet, PDF (12/26 Pages) STMicroelectronics – 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

M36W0R6030T0, M36W0R6030B0
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 3. Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
Min
Max
T_A
Ambient Operating Temperature
–40
85
°C
T_BIAS
Temperature Under Bias
–40
125
°C
T_STG
Storage Temperature
–65
155
°C
T_LEAD
Lead Temperature during Soldering
(1)
°C
V_IO
Input or Output Voltage
–0.5
V_DDQ+0.6
V
V_DDF
Flash Memory Core Supply Voltage
–0.2
2.45
V
V_DDQ
Input/Output Supply Voltage
–0.2
2.45
V
V_DDS
SRAM Supply Voltage
–0.2
2.4
V
V_PPF
Flash Memory Program Voltage
–0.2
14
V
I_O
Output Short Circuit Current
100
mA
t_VPPFH
Time for V_PPF at V_PPFH
100
hours
Note: 1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK^® 7191395 specification,
and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
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