M36W0R6030T0 Datasheet, PDF (13/26 Pages) STMicroelectronics – 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package

M36W0R6030T0, M36W0R6030B0
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in Table 4., Operating and
AC Measurement Conditions. Designers should
check that the operating conditions in their circuit
match the operating conditions when relying on
the quoted parameters.
Table 4. Operating and AC Measurement Conditions
Parameter
Flash Memory
Min
Max
SRAM
Unit
Min
Max
V_DDF Supply Voltage
1.7
1.95
–
–
V
V_DDS Supply Voltage
–
–
1.7
1.95
V
V_DDQ Supply Voltage
1.7
1.95
–
–
V
V_PPF Supply Voltage (Factory environment)
11.4
12.6
–
–
V
V_PPF Supply Voltage (Application environment)
–0.4
V_DDQ +0.4
–
–
V
Ambient Operating Temperature
–40
85
–40
85
°C
Load Capacitance (C_L)
30
30
pF
Output Circuit Resistors (R₁, R₂)
16.7
16.7
kΩ
Input Rise and Fall Times
5
2
ns
Input Pulse Voltages
0 to V_DDQ
0 to V_DDS
V
Input and Output Timing Ref. Voltages
V_DDQ/2
V_DDS/2
V
Figure 6. AC Measurement I/O Waveform
VDDQ
0V
VDDQ/2
AI06161
Figure 7. AC Measurement Load Circuit
V_DDQ
V_DDF
V_DDQ
0.1µF
0.1µF
DEVICE
UNDER
TEST
R₁
C_L
R₂
Table 5. Device Capacitance
Symbol
Parameter
C_IN
Input Capacitance
C_OUT
Output Capacitance
Note: Sampled only, not 100% tested.
C_L includes JIG capacitance
AI08364B
Test Condition
V_IN = 0V
V_OUT = 0V
Min
Max
Unit
12
pF
15
pF
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