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MB84VD2118XEM-70 Datasheet, PDF (41/52 Pages) SPANSION – Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS | |||
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MB84VD2118XEM/2119XEM-70
s 4M SRAM CHARACTERISTICS for MCP
1. AC Characteristics
⢠Read Cycle (SRAM)
Parameter
Value
Symbol
Unit
Min
Max
Read Cycle Time
tRC
70
â
ns
Address Access Time
tAA
â
70
ns
Chip Enable (CE1s) Access Time
tCO1
â
70
ns
Chip Enable (CE2s) Access Time
tCO2
â
70
ns
Output Enable Access Time
tOE
â
35
ns
LB, UB to Output Valid
tBA
â
70
ns
Chip Enable (CE1s Low and CE2s High) to Output Active
tCOE
5
â
ns
Output Enable Low to Output Active
tOEE
0
â
ns
UB, LB Enable Low to Output Active
tBE
0
â
ns
Chip Enable (CE1s High or CE2s Low) to Output High-Z
tOD
â
25
ns
Output Enable High to Output High-Z
tODO
â
25
ns
UB, LB Output Enable to Output High-Z
tBD
â
25
ns
Output Data Hold Time
tOH
10
â
ns
Note: Test Conditions
Output Load:1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to VCCs
Timing measurement reference level
Input: 0.5ÃVCCs
Output: 0.5ÃVCCs
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