MB84VD2118XEM-70 Datasheet, PDF (40/52 Pages) SPANSION – Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS

MB84VD2118XEM/2119XEM-70
2. Erase and Programming Performance (Flash)
Parameter
Limit
Min
Typ
Max
Sector Erase Time
—
1
10
Byte Programming Time
—
8
300
Word Programming Time
—
16
360
Chip Programming Time
—
—
50
Erase/Program Cycle
100,000
—
—
Unit
Comment
s
µs
µs
s
cycle
Excludes programming time
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead
Excludes system-level
overhead
40