MB84VD2118XEM-70 Datasheet, PDF (26/52 Pages) SPANSION – Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS

MB84VD2118XEM/2119XEM-70
*1: Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
*2: This command is valid while Fast Mode.
*3: This command is valid while RESET=VID.
*4: The valid Address is A6 to A0.
*5: This command is valid while HiddenROM mode.
*6: The data "00h" is also acceptable.
Notes : • Address bits A12 to A19 = X = “H” or “L” for all address commands except for Program Address (PA),
Sector Address (SA),and Bank Address (BA).
Bus operations are defined in "User Bus Operations".
RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed.
Addresses are latched on the falling edge of the write pulse.
• SA = Address of the sector to be erased. The combination of A19, A18, A17, A16, A15, A14, A13, and A12 will
uniquely select any sector.
BA = Bank address (A15 to A19)
SPA = Sector group address to be protected. Set sector group address (SGA) and (A6, A1, A0) = (0, 1, 0).
HRA = Address of the HiddenROM area.
Top Boot Block Word mode : 0F8000h to 0FFFFFh
Byte mode : 1F0000h to 1FFFFFh
Bottom Boot Block Word mode : 000000h to 007FFFh
Byte mode : 000000h to 00FFFFh
HRBA = Bank address of the HiddenROM area.
Top Boot Block
: A15 = A16 = A17 = A18 = A19 = A20 = 1
Bottom Boot Block : A15 = A16 = A17 = A18 = A19 = A20 = 0
RD = Data read from location RA during read operation.
PD = Data to be programmed at location PA.
SD = Sector protection verify data. Output 01h at protected sector addresses and output 00h
at unprotected sector addresses.
• The system should generate the following address patterns;
Word mode : 555h or 2AAh to addresses A10 to A0
Byte mode : AAAh or 555h to addresses A10 to A0 and A–1
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