MB84VD2118XEM-70 Datasheet, PDF (11/52 Pages) SPANSION – Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS

MB84VD2118XEM/2119XEM-70
(Continued)
Parameter
Symbol
Test Conditions
Value
Unit
Min Typ Max
Input Low Level
VIL
—
–0.3 —
0.5 V
Input High Level
VIH
—
2.4
— VCC+0.3 V
Voltage for Sector
Protection, and Temporary
Sector Unprotection
VID
—
11.5 — 12.5 V
(RESET) *⁴
Voltage for Program
Acceleration (WP/ACC) *⁴
VACC
—
8.5 9.0 9.5 V
SRAM Output Low Level
VOL VCCs = VCCs Min, IOL=4.0 mA
—
— 0.45 V
SRAM Output High Level
VOH VCCs = VCCs Min, IOH=–0.5 mA
2.4
—
—
V
Flash Output Low Level
VOL VCCf = VCCf Min, IOL=4.0 mA
—
—
0.4 V
Flash Output High Level
VOH VCCf = VCCf Min, IOH=–0.5 mA
2.4
—
—
V
Flash Low VCCf Lock-Out
Voltage
VLKO
—
2.3
—
2.5 V
* 1 : The ICC current listed includes both the DC operating current and the frequency dependent component.
*2 : ICC active while Embedded Algorithm (program or erase) is in progress.
*3 : Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
*4 : Applicable for only VCCf applying.
*5 : Embedded Alogorithm (program or erase) is in progress. (@5 MHz)
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