MB84VD2118XEM-70 Datasheet, PDF (10/52 Pages) SPANSION – Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS

MB84VD2118XEM/2119XEM-70
s ELECTRICAL CHARACTERISTICS
1. DC Characteristics
Parameter
Symbol
Test Conditions
Input Leakage Current
Output Leakage Current
RESET Inputs Leakage
Current
Flash VCC Active Current
(Read) *¹
Flash VCC Active Current
(Program/Erase) *²
Flash VCC Active Current
(Read-While-Program) *⁵
Flash VCC Active Current
(Read-While-Erase) *⁵
Flash VCC Active Current
(Erase-Suspend-Program)
ACC Input Leakage
Current
SRAM VCC Active Current
SRAM VCC Active Current
Flash VCC Standby Current
Flash VCC Standby Current
(RESET)
Flash VCC Current
(Automatic Sleep Mode) *³
SRAM VCC Standby
Current
SRAM VCC Standby
Current
ILI
ILO
ILIT
ICC1f
ICC2f
ICC3f
ICC4f
ICC5f
ILIA
ICC1s
ICC2s
ISB1f
ISB2f
ISB3f
ISB1s
ISB2s
VIN = VSS to VCCf, VCCs
VOUT = VSS to VCCf, VCCs
VCCf = VCCf Max,VCCs = VCCs Max,
RESET = 12.5 V
tCYCLE = 5 MHz Byte
CEf = VIL,
OE = VIH
tCYCLE = 5 MHz Word
tCYCLE = 1 MHz Byte
tCYCLE = 1 MHz Word
CEf = VIL, OE = VIH
CEf = VIL, OE = VIH
CEf = VIL, OE = VIH
Byte
Word
Byte
Word
CEf = VIL, OE = VIH
VCCf = VCCf Max,VCCs = VCCs Max,
WP/ACC = VACC Max
VCCs = VCCs Max,
CE1s = VIL,
CE2s = VIH
tCYCLE =10 MHz
CE1s = 0.2 V,
tCYCLE = 10 MHz
CE2s = VCCs – 0.2 V _{tCYCLE = 1 MHz}
VCCf = VCCf Max, CEf = VCCf ± 0.3 V,
RESET = VCCf ± 0.3 V,
WP/ACC = VCCf ± 0.3 V
VCCf = VCCf Max, RESET = VSS ± 0.3 V,
WP/ACC = VCCf ± 0.3 V
VCCf = VCCf Max, CEf = VSS ± 0.3 V,
RESET = VCCf ± 0.3 V,
WP/ACC = VCCf ± 0.3 V,
VIN = VCCf ± 0.3 V or VSS ± 0.3 V
CE1s > VCCs – 0.2 V, CE2s > VCCs – 0.2 V,
LB = UB > VCCs–0.2 V or < 0.2 V
CE1s > VCCs – 0.2 V or < 0.2 V,
CE2s < 0.2 V,
LB = UB > VCCs – 0.2 V or < 0.2 V
Min
–1.0
–1.0
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Value
Typ
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1
1
1
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Unit
Max
+1.0 µA
+1.0 µA
35 µA
13
mA
15
7
mA
7
35 mA
48
mA
50
48
mA
50
35 mA
20 mA
40 mA
40 mA
8 mA
5 µA
5 µA
5 µA
10 µA
10 µA
(Continued)
10