MB84VD2118XEM-70 Datasheet, PDF (13/52 Pages) SPANSION – Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS

MB84VD2118XEM/2119XEM-70
s 16M FLASH MEMORY CHARACTERISTICS for MCP
1. Flexible Sector-erase Architecture on Flash Memory
• Eight 4 K words, and thirty one 32 K words.
• Individual-sector, multiple-sector, or bulk-erase capability.
Bank size 4
Bank 1
Bank 2
Bank size 3
Bank 1
Bank 2
Bank size 2
Bank 1
Bank 2
Bank size 1
Bank 1
Bank 2
Word mode
SA38 : 8KB (4KW)
SA37 : 8KB (4KW)
SA36 : 8KB (4KW)
SA35 : 8KB (4KW)
SA34 : 8KB (4KW)
SA33 : 8KB (4KW)
SA32 : 8KB (4KW)
SA31 : 8KB (4KW)
SA30 : 64KB (32KW)
SA29 : 64KB (32KW)
SA28 : 64KB (32KW)
SA27 : 64KB (32KW)
SA26 : 64KB (32KW)
SA25 : 64KB (32KW)
SA24 : 64KB (32KW)
SA23 : 64KB (32KW)
SA22 : 64KB (32KW)
SA21 : 64KB (32KW)
SA20 : 64KB (32KW)
SA19 : 64KB (32KW)
SA18 : 64KB (32KW)
SA17 : 64KB (32KW)
SA16 : 64KB (32KW)
SA15 : 64KB (32KW)
SA14 : 64KB (32KW)
SA13 : 64KB (32KW)
SA12 : 64KB (32KW)
SA11 : 64KB (32KW)
SA10 : 64KB (32KW)
SA9 : 64KB (32KW)
SA8 : 64KB (32KW)
SA7 : 64KB (32KW)
SA6 : 64KB (32KW)
SA5 : 64KB (32KW)
SA4 : 64KB (32KW)
SA3 : 64KB (32KW)
SA2 : 64KB (32KW)
SA1 : 64KB (32KW)
SA0 : 64KB (32KW)
0FFFFFh
0FF000h
0FE000h
0FD000h
0FC000h
0FB000h
0FA000h
0F9000h
0F8000h
0F0000h
0E8000h
0E0000h
0D8000h
0D0000h
0C8000h
0C0000h
0B8000h
0B0000h
0A8000h
0A0000h
098000h
090000h
088000h
080000h
078000h
070000h
068000h
060000h
058000h
050000h
048000h
040000h
038000h
030000h
028000h
020000h
018000h
010000h
008000h
000000h
Sector Architecture (Top Boot Block)
Byte mode
1FFFFFh
1FE000h
1FC000h
1FA000h
1F8000h
1F6000h
1F4000h
1F2000h
1F0000h
1E0000h
1D0000h
1C0000h
1B0000h
1A0000h
190000h
180000h
170000h
160000h
150000h
140000h
130000h
120000h
110000h
100000h
0F0000h
0E0000h
0D0000h
0C0000h
0B0000h
0A0000h
090000h
080000h
070000h
060000h
050000h
040000h
030000h
020000h
010000h
000000h
(Continued)
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