S1011 Datasheet, PDF (31/43 Pages) Seiko Instruments Inc – BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR

HIGH-WITHSTAND VOLTAGE BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR
Rev.1.2_00
S-1011 Series
7. Nch transistor output current (I_OUT) vs. V_DS
7. 1 SENSE detection product
S-1011E50
30.0
V_DD = V_SENSE = 4.5 V, Ta = −40°C
VDD = 36.0 V
20.0
VDD = 16.0 V
10.0
VDD = 3.0 V
S-1011E50
30.0
20.0
10.0
V_DD = V_SENSE = 4.5 V, Ta = +25°C
VDD = 36.0 V
VDD = 16.0 V
VDD = 3.0 V
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6
VDS [V]
S-1011E50
30.0
V_DD = V_SENSE = 4.5 V, Ta = +85°C
20.0
10.0
VDD = 36.0 V
VDD = 16.0 V
VDD = 3.0 V
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6
VDS [V]
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6
VDS [V]
8. Nch transistor output current (I_OUT) vs. Power supply voltage (V_DD)
8. 1 VDD detection product
8. 2 SENSE detection product
S-1011A50
2.0
1.5
V_DS = 0.05 V
S-1011E50
V_SENSE = 4.5 V, V_DS = 0.05 V
2.5
Ta = −40°C
2.0
1.0
0.5
0.0
0.0
Ta = −40°C
Ta = +25°C
Ta = +85°C
5.0
10.0
15.0
1.5
1.0
0.5
0.0
0.0
Ta = +85°C
Ta = +25°C
6.0 12.0 18.0 24.0 30.0 36.0
VDD [V]
VDD [V]
Remark V_DS: Drain-to-source voltage of the output transistor
Seiko Instruments Inc.
31