K4S161622D Datasheet, PDF (9/41 Pages) Samsung semiconductor – 512K x 16Bit x 2 Banks Synchronous DRAM

K4S161622D
CMOS SDRAM
BURST SEQUENCE (BURST LENGTH = 4)
Initial Address
A1
A0
Sequential
Interleave
0
0
0
1
2
3
0
1
2
3
0
1
1
2
3
0
1
0
3
2
1
0
2
3
0
1
2
3
0
1
1
1
3
0
1
2
3
2
1
0
BURST SEQUENCE (BURST LENGTH = 8)
Initial Address
A2
A1
A0
Sequential
Interleave
0
0
0
0
1
23
4
5
6
70
1
23
4
5
6
7
0
0
1
1
2
34
5
6
7
01
0
32
5
4
7
6
0
1
0
2
3
45
6
7
0
12
3
01
6
7
4
5
0
1
1
3
4
56
7
0
1
23
2
10
7
6
5
4
1
0
0
4
5
67
0
1
2
34
5
67
0
1
2
3
1
0
1
5
6
70
1
2
3
45
4
76
1
0
3
2
1
1
0
6
7
01
2
3
4
56
7
45
2
3
0
1
1
1
1
7
0
12
3
4
5
67
6
54
3
2
1
0