K4S161622D Datasheet, PDF(16/41 Page) Samsung semiconductor – 512K x 16Bit x 2 Banks Synchronous DRAM

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K4S161622D Datasheet, PDF (16/41 Pages) Samsung semiconductor – 512K x 16Bit x 2 Banks Synchronous DRAM

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K4S161622D

CMOS SDRAM

5. Write Interrupted by Precharge & DQM

CLK

CMD

DQM

Note 3

PRE

Note 2

D0 D1 D2 D3

Masked by DQM

*Note : 2. To inhibit invalid write, DQM should be issued.

3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge

interrupt but only the other bank precharge of dual banks operation.

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