K4S161622D Datasheet, PDF (24/41 Pages) Samsung semiconductor – 512K x 16Bit x 2 Banks Synchronous DRAM

K4S161622D
CMOS SDRAM
Single Bit Read-Write-Read Cycle(Same Page) @CAS Latency=3, Burst Length=1
CLOCK
CKE
CS
RAS
CAS
tCH
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
tCC
*Note 1
tCL
tRAS
tRC
HIGH
tSH
tRCD
tSH
tRP
tSS
tSS
tSH
tCCD
ADDR
BA
tSH
Ra
tSS
*Note 2
BS
tSS
Ca
*Note 2,3
BS
tSS
Cb
tSH
*Note 2,3
BS
Cc
*Note 2,3 *Note 4
BS BS
Rb
*Note 2
BS
A10/AP
Ra
DQ
WE
DQM
*Note 3
tRAC
tSAC
tSLZ
*Note 3
*Note 3 *Note 4
Qa
tOH
tSH
Db
tSS
tSH
tSS
tSS
tSH
Rb
Qc
Row Active
Read
Write
Read
Precharge
Row Active
: Don't care