K4S161622D Datasheet, PDF (33/41 Pages) Samsung semiconductor – 512K x 16Bit x 2 Banks Synchronous DRAM

K4S161622D
Read & Write Cycle with Auto Precharge II @Burst Length=4
CMOS SDRAM
CLOCK
CKE
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
HIGH
CS
RAS
CAS
ADDR
Ra
Ca
Rb
Cb
BA
A10/AP
Ra
DQ CL=2
Rb
Qa0 Qa1 Qa2 Qa3
Qb0 Qb1 Qb2 Qb3
CL=3
Qa0 Qa1 Qa2 Qa3
Qb0 Qb1 Qb2 Qb3
WE
DQM
Row Active
(A-Bank)
Read with
Auto Precharge
(A-Bank)
*
Auto Precharge
Start Point
(A-Bank)
Row Active
(B-Bank)
Read with
Auto Precharge
(B-Bank)
*Note : * Any command to A-bank is not allowed in this period.
tRP is determined from at auto precharge start point
Auto Precharge
Start Point
(B-Bank)
: Don't care