K4C561638C-TCD4000 Datasheet, PDF (8/42 Pages) Samsung semiconductor – 256Mb Network-DRAM

K4C5608/1638C
256Mb Network-DRAM
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
Notes
Vdd
Power Supply Voltage
-0.3 to 3.3
V
VddQ
Power Supply Voltage (for I/O buffer)
-0.3 to Vdd + 0.3
V
V_IN
V_OUT
V_REF
T_OPR
T_STG
T_SOLDER
P_D
I_OUT
Input Voltage
-0.3 to Vdd + 0.3
V
DQ pin Voltage
-0.3 to VddQ + 0.3
V
Input Reference Voltage
-0.3 to Vdd + 0.3
V
Operating Temperature
0 to 70
O_C
Storage Temperature
-55 to 150
O_C
Soldering Temperature(10s)
260
O_C
Power Dissipation
1
W
Short Circuit Output Current
± 50
mA
Caution : Conditions outside the limits listed under "ABSOLUTE MAXIMUM RATINGS" may cause permanent damage to the device.
The device is not meant to be operated under conditions outside the limits described in the operational section of this specifi-
cation. Exposure to "ABSOLUTE MAXIMUM RATINGS" conditions for extended periods may affect device reliability.
Recommanded DC,AC Operating Conditions (Notes : 1) (Ta = 0 to 70 ×°C)
Symbol
Parameter
Vdd
Power Supply Voltage
VddQ Power Supply Voltage (for I/O Buffer)
V_REF
Input Reference Voltage
V_IH (DC) Input DC high Voltage
V_IL(DC) Input DC Low Voltage
V_ICK (DC) Differential Clock DC Input Voltage
V_ID (DC) Input Differential Voltage. CK and CK Inputs (DC)
V_IH (AC) Input AC High Voltage
V_IL (AC) Input AC Low Voltage
V_ID (AC) Input Differential Voltage. CK and CK Inputs (AC)
V_X (AC) Differential AC Input Cross Point Voltage
V_ISO (AC) Differential Clock AC Middle Level
Min
2.35
2.35
VddQ/2*96%
Typ
2.5
2.5
VddQ/2
Max
Units
2.65
V
2.65
V
VddQ/2*104% V
Notes
2
V_REF+0.2
-
VddQ+0.2
V
5
-0.1
-
V_REF-0.2
V
5
-0.1
-
VddQ+0.1
V
10
0.4
-
VddQ+0.2
V
7,10
V_REF+0.35
-
-0.1
-
0.7
-
VddQ+0.2
V
3,6
V_REF-0.35
V
4,6
VddQ+0.2
V
7,10
VddQ/2-0.2
-
VddQ/2+0.2 V
8,10
VddQ/2-0.2
-
VddQ/2+0.2 V
9,10
-8-
REV. 0.7 Aug. 2003