K4C561638C-TCD4000 Datasheet, PDF (27/42 Pages) Samsung semiconductor – 256Mb Network-DRAM

K4C5608/1638C
256Mb Network-DRAM
Single Bank Read-Write Timing (CL = 3)
0
1
2
3
4
5
6
7
8
9
10
11
CK
CK
I_RC = 5 cycles
I_RC = 5 cycles
Command
RDA LAL
DESL
WRA LAL
DESL
RDA LAL
BL = 2
I_RCD = 1 cycle
I_RAS = 4 cycles
I_RCD = 1 cycle
I_RAS = 4 cycles
DQS
Hi-Z
Hi-Z
Hi-Z
CL = 3
WL = 2
DQ
Hi-Z
Q0 Q1
Hi-Z
D0 D1
Hi-Z
BL = 4
DQS
Hi-Z
Hi-Z
t_DQSS
Hi-Z
DQ
Hi-Z
CL = 3
WL = 2
Q0 Q1 Q2 Q3
Hi-Z
D0 D1 D2 D3
Hi-Z
Single Bank Read-Write Timing (CL = 4)
0
1
2
3
4
5
6
7
8
9
10
11
CK
CK
I_RC = 5 cycles
I_RC = 5 cycles
Command
RDA LAL
DESL
WRA LAL
DESL
RDA LAL
BL = 2
DQS
I_RCD = 1 cycle
Hi-Z
DQ
Hi-Z
BL = 4
Hi-Z
DQS
DQ
Hi-Z
I_RAS = 4 cycles
CL = 4
CL = 4
I_RCD = 1 cycle
I_RAS = 4 cycles
Hi-Z
Hi-Z
Q0 Q1
WL = 3
Hi-Z
D0 D1
Hi-Z
Q0 Q1 Q2 Q3
Hi-Z
WL = 3
Hi-Z
Hi-Z
D0 D1 D2 D3 ^Hi-Z
- 27 -
REV. 0.7 Aug. 2003