K4C561638C-TCD4000 Datasheet, PDF (12/42 Pages) Samsung semiconductor – 256Mb Network-DRAM

K4C5608/1638C
256Mb Network-DRAM
AC Characteristics and Operating Conditions (Notes : 1, 2) (Continued)
Symbol
Item
t_REFI
t_PAUSE
I_RC
I_RCD
I_RAS
I_RBD
I_RWD
I_WRD
I_RSC
I_PD
I_PDA
I_PDV
I_REFC
I_CKD
I_LOCK
Auto-Refresh Average Interval
Pause Time after Power-up
Random Read/Write Cycle Time
(Applicable to Same Bank)
RDA/WRA to LAL Command Input Delay
(Applicable to Same Bank)
LAL to RDA/WRA Command Input Delay
(Applicable to Same Bank)
Random Bank Access Delay
(Applicable to Other Bank)
LAL following RDA to WRA Delay
(Applicable to Other Bank)
LAL following WRA to RDA Delay
(Applicable to Other Bank)
Mode Register Set Cycle Time
CL = 3
CL = 4
CL = 3
CL = 4
BL = 2
BL = 4
CL = 3
CL = 4
PD Low to Inactive State of Input Buffer
PD High to Active State of Input Buffer
Power down mode valid from REF command
Auto-Refresh Cycle Time
REF Command to Clock Input Disable
at Self-Refresh Entry
CL = 3
CL = 4
CL = 3
CL = 4
DLL Lock-on Time (Applicable to RDA command)
D4(400Mbps)
Min
Max
0.4
7.8
200
-
5
-
5
-
1
1
4
-
4
-
2
-
2
-
3
-
1
-
5
-
5
-
-
1
-
1
15
-
18
-
15
-
18
-
16
-
200
-
DA(366Mbps)
Min
Max
0.4
7.8
200
-
5
-
5
-
1
1
4
-
4
-
2
-
2
-
3
-
1
-
5
-
5
-
-
1
-
1
15
-
18
-
15
-
18
-
16
-
200
-
D3(333Mbps)
Min
Max
0.4
7.8
200
-
5
-
5
-
1
1
4
-
4
-
2
-
2
-
3
-
1
-
5
-
5
-
-
1
-
1
15
-
18
-
15
-
18
-
16
-
200
-
Units Notes
5
us
Cycle
- 12 -
REV. 0.7 Aug. 2003