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K4C561638C-TCD4000 Datasheet, PDF (17/42 Pages) Samsung semiconductor – 256Mb Network-DRAM
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K4C5608/1638C
256Mb Network-DRAM
Write Timing (Burst Length = 4)
tCH
tCL
tCK
CK
CK
Input
(Control &
Addresses)
tIS tIH
LAL
(after WRA)
tIPW
CAS latency = 3
DQS
(Input)
tDSPRES
tDQSS
tDSPREH
Preamble
tDSPRE
tDS
tDSP
tDSP
tDSP
tDSPSTH
tDSS
tDSPST
tDSS
tDIPW tDS
tDH
Postamble
tDS
tDH
tDH
DQ
(Input)
CAS latency = 4
DQS
(Input)
D0 D1 D2 D3
tDQSS
tDSPRES
tDSPREH
tDSP
tDSS
tDSP
tDSP
tDSS
tDSPSTH
tDSPST
Preamble
tDSPRE
tDS
tDSS
tDIPW tDS
tDH
Postamble
tDS
tDH
tDH
DQ
(Input)
D0 D1 D2 D3
tDQSS
tDQSS
Note. The correspondence of LDQS, UDQS to DQ. (K4C561638C-TC)
LDQS
DQ0 to 7
UDQS
DQ8 to 15
tREFI, tPAUSE, Ixxxx Timing
CK
CK
Input
(Control &
Addresses)
tIS tIH
Command
tREFI,tPAUSE,IXXXX
tIS tIH
Command
Note. "IXXXX"means "IRC", "IRCD", "IRAS", etc.
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REV. 0.7 Aug. 2003
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