K4C561638C-TCD4000 Datasheet, PDF (2/42 Pages) Samsung semiconductor – 256Mb Network-DRAM

K4C5608/1638C
Revision History
Version 0.0 (Oct. / 5 / 2001)
- First Release
Version 0.1 (Dec. / 15 / 2001)
- The product name is changed to Network-DRAM
Version 0.2 (Jan. / 21 / 2002)
- M-version is renamed to C-version
- Specify DC operating condition values
- Added Power Up Sequence and Power Down(CL=4) Timing Diagrams
Version 0.3 (Mar. / 23 / 2002)
- The product name is changed to Network RAM
- Added Speed bin (366Mbps/pin,183MHz)
Version 0.4 (May. / 01 / 2002)
- The product name is changed to Network-DRAM
- Redefined IDD1S, IDD5 in DC Characteristic
Version 0.5 (Nov. /23 / 2002)
-Updated the current spec. value
Version 0.6 (Apr. /9 / 2003)
-Changed IDD2P value from 2mA to 3mA in page 10.
-Changed capacitance of DQ/DQS
Unit: pF
Capacitance(DQ/DQS)
From
Min Max
4.0
6.0
To
Min Max
3.0
6.0
Version 0.7 (Aug.31 / 2003)
-Changed tCK max like below
From
To
D4
DA
D3
D4
DA
D3
8.5
12
12
7.5
7.5
7.5
256Mb Network-DRAM
-2-
REV. 0.7 Aug. 2003