K4C561638C-TCD4000 Datasheet, PDF (3/42 Pages) Samsung semiconductor – 256Mb Network-DRAM

K4C5608/1638C
256Mb Network-DRAM
General Information
Organization
256Mx8
256Mx16
D4 (400Mbps)
K4C560838C-TCD4
K4C561638C-TCD4
DA (366Mbps )
K4C560838C-TCDA
K4C561638C-TCDA
D3 (333Mbps )
K4C560838C-TCD3
K4C561638C-TCD3
12 3 4
5 678
9 10 11
K 4 C XX XX X X X - X X XX
Memory
DRAM
Small Classification
Density and Refresh
Organization
Bank
Speed
Temperature & Power
Package
Version
Interface (VDD & VDDQ)
1. SAMSUNG Memory : K
2. DRAM : 4
3. Small Classification
C : Network-DRAM
4. Density & Refresh
56 : 256M 8K/64ms
5. Organization
08 : x8
16 : x16
6. Bank
3 : 4 Bank
7. Interface (VDD & VDDQ)
8: SSTL-2(2.5V, 2.5V)
8. Version
C : 4th Generation
9. Package
T : TSOP II (400mil x 875mil)
10. Temperature & Power
C : (Commercial, Normal)
11. Speed
D4 : 400bps/pin (200MHz, CL=4)
DA : 366bps /pin (183MHz, CL=4)
D3 : 333bps/pin (167MHz, CL=4)
-3-
REV. 0.7 Aug. 2003