K4C561638C-TCD4000 Datasheet, PDF (31/42 Pages) Samsung semiconductor – 256Mb Network-DRAM

K4C5608/1638C
256Mb Network-DRAM
Single Bank Write with VW (CL=3, BL=4, Sequential mode)
CK
CK
x8 device
Command
0
1
WRA LAL
2
3
4
5
6
7
8
9
10
11
I_RC = 5 cycles
DESL
WRA LAL
I_RC = 5 cycles
DESL
WRA LAL
Address
UA
LA=#3
VW=2
UA
LA=#1
VW=1
DQS
(Input)
DQ
(Input)
x16 device
Command
Last two data are masked.
D0 D1
Address #3 #0 (#1) (#2)
WRA LAL
DESL
WRA LAL
UA
LA
Last three data are masked.
D0
#1 (#2) (#3) (#0)
DESL
WRA LAL
Address
UDQS
(Input)
DQ8 to
DQ15
(Input)
LDQS
(Input)
DQ0 to
DQ7
(Input)
LA=#3
UA
UVW=2
LVW=1
LA=#3
UA
UVW=1
LVW=1
UA
LA
Last two data are masked.
D0 D1
Address #3 #0 (#1) (#2)
Last three data are masked.
D0
#1 (#2) (#3) (#0)
Last three data are masked.
D0
Address #3 (#0) (#1) (#2)
Last three data are masked.
D0
#1 (#2) (#3) (#0)
Notes : DQS input must be continued till end of burst count even if some of laster data is masked.
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REV. 0.7 Aug. 2003